Product Information

005792X

Product Image X-ON

Datasheet
QSC113 I/R DETECTOR T1
Manufacturer: ON Semiconductor



Price (Ex GST)

From 0.238

240 - Global Stock
Ships to you by
Mon. 22 Aug
MOQ: 1 Multiples:1
Pack Size :   1
Availability Price Quantity
240 - Global Stock


Ships to you by Mon. 22 Aug

MOQ : 1
Multiples : 1

Stock Image

005792X
ON Semiconductor

1 : $ 0.51
10 : $ 0.459
100 : $ 0.306
250 : $ 0.255
500 : $ 0.238

     
Manufacturer
ON Semiconductor
Product Category
Phototransistors
Package / Case
T - 1
Collector- Emitter Voltage VCEO Max
30 V
Dark Current
100 nA
Rise Time
5 us
Fall Time
5 us
Pd - Power Dissipation
100 mW
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 100 C
Series
Qsc113
Packaging
Bulk
Type
Photo Transistor
Brand
Fairchild Semiconductor
Factory Pack Quantity :
250
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QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor April 2007 QSC112, QSC113, QSC114 tm Plastic Silicon Infrared Phototransistor Features Description Tight production distribution The QSC112/113/114 is a silicon phototransistor encap- PACKAGE DIMENSIONS sulated in an infrared transparent, black T-1 package. Steel lead frames for improved reliability in solder mounting Good optical-to-mechanical alignment Plastic package is infrared transparent black to attenuate visible light Can be used with QECXXX LED Black plastic body allows easy recognition from LED Package Dimensions 0.116 (2.95) REFERENCE SURFACE 0.193 (4.90) 0.052 (1.32) 0.032 (0.082) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) EMITTER 0.100 (2.54) Schematic NOM COLLECTOR 0.155 (3.94) 0.018 (0.46) SQ. (2X) Notes: EMITTER 1. Dimensions of all drawings are in inches (mm). 2. Tolerance is 0.10 (.25) on all non-nominal dimensions unless otherwise specied. 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com QSC112, QSC113, QSC114 Rev. 1.0.2QSC112, QSC113, QSC114 Plastic Silicon Infrared Phototransistor Absolute Maximum Ratings (T = 25C unless otherwise specied) A Symbol Parameter Rating Units T Operating Temperature -40 to +100 C OPR Storage Temperature -40 to +100 C T STG (2,3,4) T Soldering Temperature (Iron) 240 for 5 sec C SOL-I (2,3) T Soldering Temperature (Flow) 260 for 10 sec C SOL-F Collector-Emitter Voltage 30 V V CE V Emitter-Collector Voltage 5 V EC (1) P Power Dissipation 100 mW D Notes: 1. Derate power dissipation linearly 1.33 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) minimum from housing. Electrical/Optical Characteristics (T =25C) A Symbol Parameter Test Conditions Min. Typ. Max. Units Peak Sensitivity Wavelength 880 nm PS Reception Angle 4 Collector-Emitter Dark Current V = 10 V, Ee = 0 100 nA I CEO CE BV Collector-Emitter Breakdown I = 1 mA 30 V CEO C Emitter-Collector Breakdown I = 100 A 5 V BV ECO E 2 (5) On-State Collector Current QSC112 Ee = 0.5 mW/cm , V = 5 V 14mA I C(ON) CE On-State Collector Current QSC113 2.40 9.60 On-State Collector Current QSC114 4.00 2 (5) Saturation Voltage Ee = 0.5 mW/cm , I = 0.5 mA 0.4 V V CE(sat) C t Rise Time V = 5 V, R = 100 , I = 2 mA 5.0 s r CC L C Fall Time 5.0 t f Note: 5. = 880 nm, AlGaAs. 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com QSC112, QSC113, QSC114 Rev. 1.0.2 2

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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