Product Information


MTP3055VL electronic component of ON Semiconductor

MOSFET 60V Single N-Ch

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

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1: ¥ 170.0092 ea
Line Total: ¥ 170.0092

100 - Global Stock
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Wed. 27 Sep
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Pack Size: 1
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1000 : ¥ 121.5401

100 - Global Stock

Ships to you by Wed. 27 Sep

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Multiples : 1

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1 : ¥ 170.0092
10 : ¥ 193.7592
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10000 : ¥ 116.978

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ON Semiconductor
Product Category
Id - Continuous Drain Current
12 A
Vds - Drain-Source Breakdown Voltage
60 V
Rds On - Drain-Source Resistance
180 mOhms
Transistor Polarity
N - Channel
Vgs - Gate-Source Breakdown Voltage
15 V
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
48 W
Mounting Style
Through Hole
Package / Case
TO - 220 - 3
Channel Mode
Fairchild Semiconductor
Fall Time
90 ns
Rise Time
190 ns
Factory Pack Quantity :
Typical Turn-Off Delay Time
30 ns
Typical Turn-On Delay Time
20 ns
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Is Now Part of To learn more about ON Semiconductor, please visit our website at ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.MTP3055VL June 2000 DISTRIBUTION GROUP* MTP3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 12 A, 60 V. R = 0.18 V = 5 V DS(ON) GS This N-Channel Logic Level MOSFET has been designed specifically for low voltage, high speed switching Critical DC electrical parameters specified at elevated applications i.e. power supplies and power motor temperature. controls. Low drive requirements allowing operation directly from This MOSFET features faster switching and lower gate logic drivers. Vgs(th) < 2 V. charge than other MOSFETs with comparable R DS(ON) specifications. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. The result is a MOSFET that is easy and safer to drive 175C maximum junction temperature rating. (even at very high frequencies). D G G TO-220 D S S T = 25C unless otherwise noted Absolute Maximum Ratings C Ratings Symbol Parameter Units V Drain-Source Voltage 60 V DSS V Gate-Source Voltage 15 V GSS I Drain Current - Continuous 12 A D - Pulsed 42 P Power Dissipation T = 25C48 W D C Derate above 25C0.32 W/ C T , T Operating and Storage Junction Temperature Range -65 to +175 C J STG Thermal Characteristics C/W R Thermal Resistance, Junction-to- Case 3.13 JC Thermal Resistance, Junction-to- Ambient (Note 1) 62.5 C/W R JA Package Outlines and Ordering Information Device Marking Device Package Information Quantity MTP3055VL MTP3055VL Rails/Tubes 45 units Die and manufacturing source subject to change without prior notification * . 1999 Fairchild Semiconductor Corporation MTP3055VL Rev. A1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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